The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
May. 29, 2002
Macronix International Co., Ltd, Hsinchu, TW;
Abstract
A method for pulling back SiN to increase rounding effect in a shallow trench isolation process, includes the steps of preparing a substrate of Si and forming a SiO layer on the substrate, forming a Si N layer on the SiO layer, defining Si N trenches by plasma etching, etching the remaining Si N with SF /HB gas, etching SiO layer to form a platform and enhance the rounding of the platform, etching the substrate to have a third shallow trench and a reinforced platform, filling the third shallow trench with oxide, planarizing the filled oxide using chemical mechanical polishing, and removing the Si N layer, wherein after the removal of the Si N layer, multiple cleaning processes are performed.