The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
Oct. 12, 2000
Hong-Tsz Pan, Hsinchu Hsien, TW;
Tung-Po Chen, Taichung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A process for forming high temperature stable self-aligned suicide layer that not only establishes itself smoothly and uniformly despite the use of a high temperature in the siliciding reaction, but also can withstand other subsequent high temperature thermal processing operations and maintaining a stable metal silicide layer profile thereafter. Moreover, desired thickness and uniformity of the metal suicide layer can be obtained by suitably adjusting the amorphous implant parameters, while the use of a titanium nitride cap layer help to stabilize the metal silicide layer during high temperature formation and that a stable and uniform metal suicide layer profile can be ensured even if subsequent high temperature processing operations are performed.