The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2003
Filed:
Apr. 04, 2002
Applicant:
Inventors:
Richard Fournel, Lumbin, FR;
Cyrille Dray, Grenoble, FR;
Daniel Caspar, Saint Hilaire du Touvet, FR;
Assignee:
STMicroelectronics SA, Montrouge, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/604 ;
U.S. Cl.
CPC ...
G11C 1/604 ;
Abstract
A FAMOS memory cell is electrically erased. The FAMOS memory cell may be electrically erased by applying to the substrate a voltage having a value at least 4 volts higher than the lower of a voltage applied to the source and a voltage applied to the drain. The voltage applied to the substrate is also less than a predetermined limit above which the memory cell is destroyed.