The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2003
Filed:
Jan. 22, 2001
Applicant:
Inventors:
Terunao Hanaoka, Suwa, JP;
Kenji Wada, Suwa, JP;
Nobuaki Hashimoto, Suwa, JP;
Haruki Ito, Suwa, JP;
Kazushige Umetsu, Suwa, JP;
Fumiaki Matsushima, Suwa, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/348 ; H01L 2/352 ; H01L 2/940 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/348 ; H01L 2/352 ; H01L 2/940 ; H01L 2/14763 ;
Abstract
A method of manufacturing a semiconductor device comprises a step of forming a through-hole in a semiconductor chip having an electrode and forming a conductive layer on a region comprising an inner side of the through-hole. An intermediate portion of the through-hole is formed to be larger than an edge portion thereof, and the conductive layer is formed by electroless plating.