The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2003
Filed:
Jan. 23, 2002
Nanaji Saka, Cambridge, MA (US);
Jiun-Yu Lai, Waltham, MA (US);
Hilario L. Oh, Rochester Hills, MI (US);
ASML US, Inc., Scotts Valley, CA (US);
Abstract
A method of chemical mechanical polishing of a metal damascene structure which includes an insulation layer having trenches on a wafer and a metal layer having a lower portion located in trenches of the insulation layer and an upper portion overlying the lower portion and the insulation layer is provided. The method comprises a first step of planarizing the upper portion of the metal layer and a second step of polishing the insulation layer and the lower portion of the metal layer. In the first step of planarizing the upper portion of the metal layer, the wafer and a polishing pad is urged at an applied pressure p and a relative velocity v in a contact mode between the wafer and the polishing pad to promote an increased metal removal rate. In the second, the insulation layer and the lower portion of the metal layer are polished in a steady-state mode to form individual metal lines in the trenches with minimal dishing of the metal lines and overpolishing of the insulation layer.