The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2003
Filed:
Jul. 13, 2001
Applicant:
Inventor:
Mihel Seitz, Wappingers Falls, NY (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A method of providing isolation between active areas of memory cells in a memory device having a plurality of isolation trenches ( ) separating the active areas, comprising depositing a first insulating material ( ) and forming a resist ( ) over the first insulating material ( ) over at least the trenches ( ), leaving a first top portion of the first insulating material ( ) exposed. At least a second top portion of the first insulating material ( ) is removed, the resist ( ) is removed, and a second insulating material ( ) is deposited over the wafer ( ) to completely fill the isolation trenches ( ).