The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2003
Filed:
Jul. 25, 2001
Zhiyi Yu, Gilbert, AZ (US);
Ravindranath Droopad, Chandler, AZ (US);
Corey Overgaard, Phoenix, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
High quality epitaxial layers of monocrystalline oxide materials ( ) are grown overlying monocrystalline substrates such as large silicon wafers ( ) using RHEED information to monitor the growth rate of the growing film. The monocrystalline oxide layer ( ) may be used to form a compliant substrate for monocrystalline growth of additional layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer ( ) on a silicon wafer ( ) spaced apart from the silicon wafer ( ) by an amorphous interface layer of silicon oxide ( ). The amorphous interface layer ( ) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer ( ).