The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2003
Filed:
May. 24, 2002
Applicant:
Inventors:
Fabrice Amy, Andresy, FR;
Christian Brylinski, Neuilly sur Seine, FR;
Gérald Dujardin, Châtenay Malabry, FR;
Hanna Enriquez, Paris, FR;
Andrew Mayne, Antony, FR;
Patrick Soukiassian, St. Remy les Chevreuse, FR;
Assignee:
Commissariat A l'Energie Atomique, Paris, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/904 ; B32B 9/00 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/904 ; B32B 9/00 ;
Abstract
A highly oxygen-sensitive silicon layer ( ) is formed on a substrate ( ) of, for example, SiC. The layer ( ) has a 4×3 surface structure. The silicon layer ( ) is deposited on a surface of the substrate ( ) in a substantially uniform manner. The highly oxygen-sensitive silicon layer of the present invention may be used, for example in microelectronics.