The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6665225 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 16, 2003

Filed:

Jun. 03, 2002
Applicant:
Inventor:

Mitsunori Tsujino, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 ;
U.S. Cl.
CPC ...
G11C 7/00 ;
Abstract

In a semiconductor integrated circuit having a DRAM, a DWL driver circuit has a bias function unit ( ) for supplying, as a potential of a word line, a sub decode signal of an H level in an active state and an L level signal of a ground potential in a standby state, and switching the potential of the word line to a low potential for self refresh which is higher than the ground potential only by a very small value (+&agr;volts) in a self refresh mode. Thus, a refresh cycle is extended to thereby reduce a self refresh current.


Find Patent Forward Citations

Tsujino, Mitsunori. (2003). Semiconductor integrated circuit with reduction of self refresh current (U.S. Patent No. 6665225). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6665225

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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