The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2003
Filed:
Apr. 18, 2002
Applicant:
Inventors:
Sum-Yee Tang, San Jose, CA (US);
May Yuxiang Wang, Palo Alto, CA (US);
Lester A. D'Cruz, San Jose, CA (US);
Assignee:
Applied Materials Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Abstract
A mixed-frequency, high temperature PECVD process is utilized to create a high quality silicon nitride layer having highly conformal properties. Deposition in an ammonia rich ambient at high temperature reduces microloading between dense and isolated features by improving surface mobility of precursors. High quality nitride films formed by the instant process are particularly suited for front-end applications such as the formation of spacer structures and the formation of contact etch stop layers.