The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2003
Filed:
Mar. 22, 2001
Applicant:
Inventors:
Son Van Nguyen, San Jose, CA (US);
Neil Leslie Robertson, Palo Alto, CA (US);
Thomas Edward Dinan, San Jose, CA (US);
Thao Duc Pham, San Jose, CA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/00 ; H01F 4/100 ;
U.S. Cl.
CPC ...
G03F 7/00 ; H01F 4/100 ;
Abstract
An etch barrier to be used in a photolithograph process is disclosed. A silicon rich etch barrier is deposited on a substrate using a low energy deposition technique. A diamond like carbon layer is deposited on the silicon rich etch barrier. Photoresist is then placed on this etch barrier DLC combination. To form photolithographic features, successive steps of oxygen and flourine reactive ion etching is used.