The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2003

Filed:

Nov. 07, 2001
Applicant:
Inventors:

Joyce S. Oey Hewett, Austin, TX (US);

Christopher A. Bode, Austin, TX (US);

Assignee:

Advanced Micro Devices, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 ; G03F 7/30 ; G03F 7/16 ; G03F 7/38 ; G03F 7/40 ;
U.S. Cl.
CPC ...
G03F 7/20 ; G03F 7/30 ; G03F 7/16 ; G03F 7/38 ; G03F 7/40 ;
Abstract

In one illustrative embodiment, the method comprises initiating a develop process on a layer of photoresist formed above a wafer, indicating an endpoint of the develop process, determining a duration of the endpoint develop process, and determining if the determined duration of the develop process is not within a preselected range. In another aspect, the present invention is directed to a system that comprises a develop station for performing a develop process on a layer of photoresist formed above a wafer, a develop endpoint detector for indicating an endpoint of the develop process, and a controller for determining if a duration of the develop process is not within a preselected range.


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