The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2003

Filed:

Jan. 05, 2001
Applicant:
Inventors:

Yoshio Kawamura, Kokubunji, JP;

Kan Yasui, Kokubunji, JP;

Masahiko Sato, Kumagaya, JP;

Souichi Katagiri, Kodaira, JP;

Masayuki Nagasawa, Kawagoe, JP;

Kunio Harada, Hachioji, JP;

Satoshi Osabe, Higashimurayama, JP;

Ui Yamaguchi, Urawa, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24B 1/00 ;
U.S. Cl.
CPC ...
B24B 1/00 ;
Abstract

The problem of non-uniform polishing properties of a circumferential surface area of a substrate, so-called edge sagging phenomenon, is solved. When a thin film formed on a top surface of the substrate is polished while holding a back surface of the substrate, local stress at a circumferential end of the substrate is reduced by a guide installed so as to surround the substrate. Also, a deformation of the outer circumferential end portion of the substrate is reduced by a recessed groove provided on the guide. Since a thin film formed on the surface can be polished to be flat throughout the surface of the substrate without an occurrence of non-uniform polishing properties of the outer circumferential surface area of the substrate, so-called edge sagging phenomenon, a high-performance semiconductor device can be manufactured at a high yield and low costs.


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