The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
Mar. 03, 2000
Sau C. Wong, Hillsborough, CA (US);
Multi Level Memory Technology, San Jose, CA (US);
Abstract
A non-volatile, multi-bit-per-cell, Flash memory uses a storage process and/or architecture that is not sector-based. A data block can be stored without unused storage cells remaining in the last sector that stores part of the data block. For an operation erasing one or more data blocks, data blocks to be saved are read from an array and stored temporarily in a storage device. The entire array is then erased; after which the saved data blocks are rewritten in the memory with the amount of storage originally allocated to the erased data now being available for new data. This data arrangement does not subject any memory cells to a large accumulated cell disturbance because all data is read from the array and freshly re-written back into the array every time a record operation occurs. Additionally, the separate sectors in the memory device do not have different endurance histories that must be accounted for to extend the life of the memory. A single erase count for an array can be used in selection of operating parameters such as voltages used during accesses of memory cells in the array.