The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
Jul. 29, 2002
Daniel Chang, Fremont, CA (US);
Lovoltech Inc., Santa Clara, CA (US);
Abstract
A matching circuit for coupling a conventional metal-oxide semiconductor field effect transistor (MOSFET) driver to the gate of a junction field effect transistor (JFET). A driver circuit optimized for driving a MOSFET is combined with a matching circuit to provide gate drive for a JFET. The matching circuit comprises a resistor and capacitor in parallel. For driving enhancement mode JFETs having a gate grid array structure and a pinch-off voltage greater than 0.4 volts, the range of resistor values is 10 to 200 ohms, and the range of capacitor values is 1 to 100 nF. For devices having a pinch-off voltage less than 0.4 volts, the range of resistor values is 100 to 2000 ohms. The matching circuit may further include a diode to provide a bias.