The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
Mar. 25, 2002
Shao-Chung Hu, Taipei, TW;
Hsueh-Chung Chen, Taipei Hsien, TW;
Shih-Hsun Hsu, Chi-Lung, TW;
Chia-Lin Hsu, Taipei, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method for planarization of a semiconductor wafer with a high selectivity is describe. The semiconductor wafer has a hard mask, a stop layer disposed on the hard mask, and a barrier layer disposed on the stop layer. The method includes performing a chemical mechanical polishing (CMP) process on the barrier layer so as to expose the stop layer, and removing the stop layer. The polishing selectivity of the barrier layer relative to the stop layer is greater than 50. Since the material of stop layer is different from the material of barrier layer, the high selectivity is easily achieved. Thus, the surface of semiconductor wafer can be highly planarized.