The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
May. 04, 2001
Deidre A. Hirschfeld, Socorro, NM (US);
W Kent Schubert, Albuquerque, NM (US);
Chad S. Watson, Socorro, NM (US);
New Mexico Tech Research Foundation, Socorro, NM (US);
Abstract
A method is provided for anodically bonding glass and semiconducting material. A glass sample is immersed in a molten salt bath for a fixed period of time to modify the surface of the glass sample via ion exchange. The salt is a lithium salt or a proton source. After the glass sample is removed from the salt bath, the glass sample and semiconducting material are placed onto one another, and are then heated to a temperature of between 100° C. and 500° C. While at this temperature, a potential is applied across the glass and semiconducting material for a fixed period of time to effect anodic bonding together of the glass and semiconducting material.