The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Dec. 12, 2001
Applicant:
Inventors:
Pin-Chin Connie Wang, Menlo Park, CA (US);
Steven C. Avanzino, Cupertino, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/900 ; H01L 2/348 ; H01L 2/940 ;
U.S. Cl.
CPC ...
H01L 3/900 ; H01L 2/348 ; H01L 2/940 ;
Abstract
An integrated circuit and manufacturing method therefor is provided having a semiconductor substrate with a semiconductor device. A device dielectric layer formed on the semiconductor substrate. A channel dielectric layer on the device dielectric layer has an opening formed therein. A barrier layer lines the channel opening. A conductor core fills the opening over the barrier layer. A cerium-conductor interconnect cap is disposed over the conductor core with a capping layer over the dielectric layer and the cerium-conductor interconnect cap.