The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Nov. 09, 2001
Kenji Yoshiyama, Hyogo, JP;
Kiyoaki Morita, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A lower metal layer is provided on a lower interlayer insulating film in an MIM capacitance element forming region. The lower metal layer is formed by the same step as that in which the lower interconnection layer is formed. A dielectric layer and an upper metal layer patterned using the same mask are provided on the lower metal layer. The upper metal layer is formed to have a thickness that is thinner than the thickness of the lower metal layer. Thus, it becomes possible to achieve high reliability (lifetime) of the MIM capacitance element by improving the structure of the MIM capacitance element as well as the manufacturing steps.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile