The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Aug. 24, 1999
Applicant:
Inventors:
Kohei Eguchi, Tokyo, JP;
Yuichi Egawa, Tokyo, JP;
Shoichi Iwasa, Tokyo, JP;
Hideki Fujikake, Tokyo, JP;
Wataru Yokozeki, Tokyo, JP;
Tatsuya Kawamata, Tokyo, JP;
Assignee:
United Microelectronics Corporation, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 3/1036 ; H01L 3/1112 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 3/1036 ; H01L 3/1112 ;
Abstract
A semiconductor device has field shield isolation or trench type isolation between elements which suppresses penetration of field oxide into an element active region of the device. A common gate is located between two MOS transistors, which may be of opposite conductivity type. After gate electrode wiring layers are formed in a field region and an active region to the same level, a pad polysilicon film formed on the entire surface to cover the patterns of these gate electrode wiring layers, which are in separated patterns.