The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Sep. 05, 2001
Applicant:
Inventor:
Sung-Un Kwean, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
A transistor includes a substrate and a gate electrode formed on the substrate and having a wider upper portion than lower portion. A spacer is formed on the side wall of the gate electrode from the upper portion to the lower portion of the gate electrode. A first impurity doped region is formed at an upper portion of the substrate and a second impurity doped region having a higher concentration is formed at a narrower and deeper region than the first impurity doped region.