The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Oct. 06, 2000
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
First, a passivation film having an opening K from which a part of the Al electrode formed through an interlayer insulating film made of a BPSG film is exposed is formed on a wafer. A wiring layer , which is connected to the Al electrode exposed from the opening K and extended to the upper surface of the wafer, is formed. After a metal post is formed on the wiring layer , a first groove TC , which is located on the periphery of the chip inclusive of the wiring layer and half cuts the wafer, is formed. The upper portion of the interlayer insulating film is isotropically etched through the first groove TC to form a second groove TC having a larger opening diameter than that of the first groove TC . The wafer surface inclusive of the wiring layer , second groove TC and first groove TC is resin-sealed to form an insulating resin layer R. Thereafter, a solder ball is formed on the metal post exposed from the insulating resin layer R. Finally, the wafer is fully cut through the insulating resin layer R formed in the first and the second grooves TC and TC