The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Nov. 16, 2001
Luc Ouellet, Granby, CA;
Yves Tremblay, Brigham, CA;
Dalsa Semiconductor Inc., Waterloo, CA;
Abstract
A method of making highly reflective mirrors on a wafer in the manufacture of photonic devices involves preheating a wafer to remove adsorbed volatile contaminants at a temperature between about 300 and 600° C. The wafer surface is etched at a temperature between about 300 and 600° C. to remove absorbed and chemically absorbed contaminants in the presence of a plasma to prevent poisoning. The wafer surface is thoroughly cooled so as to as reduce the surface mobility of the impinging atoms during the subsequent metallic deposition. A deposition is then carried out on the cooled wafer of a gettering layer for gettering hydrogen, oxygen and nitrogen. A metallic reflective layer is then deposited in a deposition chamber, and finally the wafer is removed from the deposition chamber to prevent excessive bulk oxidation.