The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2003

Filed:

Oct. 11, 2001
Applicant:
Inventors:

Yong-Il Kim, ChonAn, KR;

Won-Hyung Lee, ChonAn, KR;

Byung-Ha Cho, DaeJeon-Mage, KR;

Assignee:

Moohan Co., Ltd., ChonAn, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/600 ; H05H 1/00 ; H05H 1/02 ;
U.S. Cl.
CPC ...
C23C 1/600 ; H05H 1/00 ; H05H 1/02 ;
Abstract

Disclosed are an apparatus for and a process of atomic layer deposition using remote plasma. A thin film is deposited to a desired thickness on a wafer by use of the apparatus, which comprises a plurality of transfer pipes for individually transferring the first and the second reactive gas and the carrier gas to the vacuum chamber; an energy supplier, provided inside the transfer pipe for transferring the first and the second reactive gas, for supplying excitation energy to generate excited plasma to ionize the first reactive gas; and a valve controller, established in the transfer pipes, for alternately feeding into the vacuum chamber the second reactive gas and the first reactive gas ionized by the plasma excited in the energy supplier, at predetermined time intervals.

Published as:

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