The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Sep. 25, 2001
Akinobu Nasu, Ibaraki Prefecture, JP;
Jean-Marc Girard, Ibaraki Prefecture, JP;
Abstract
Provided is a copper source liquid useful in MOCVD processes for forming copper thin films on semiconductor wafers. The source liquid comprises water and a source component wherein the source component contains at least 90 weight % Cu(hfac)TMVS and the copper source liquid preferably contains no more than 10 weight % water. The dissolved oxygen concentration in the water is established at no more than 0.5 ppm relative to the water. Decomposition of the Cu(hfac)TMVS is controlled in the present invention by lowering the dissolved oxygen concentration in the water. The resulting copper source liquid allows for improved reproducibility of CVD film quality by raising the capacity to control the amount of water addition to the copper source liquid used in MOCVD processes.