The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Aug. 30, 2000
Muneo Maruyama, Tokyo, JP;
Takahiko Watanabe, Tokyo, JP;
Hironori Kikkawa, Tokyo, JP;
Yuji Yamamoto, Tokyo, JP;
Mamoru Okamoto, Tokyo, JP;
Michiaki Sakamoto, Tokyo, JP;
Shinichi Nakata, Tokyo, JP;
Masanobu Hidehira, Tokyo, JP;
Yoshitaka Horie, Tokyo, JP;
NEC LCD Technologies, Ltd., , JP;
Abstract
Band-shaped data lines are arranged in parallel with each other so as to cross address lines via a gate insulating film formed over the address lines. An upper insulating film is formed over the data lines, and pixel electrodes are formed on the upper insulating film. Storage capacitance section includes common electrode and storage capacitance electrode. The common electrode is extended from the address line of adjacent pixel region. The storage capacitance electrode sandwiches the gate insulating film with the common electrode to store capacitance therebetween. The storage capacitance electrodes and the pixel electrodes are connected to each other via conductive through hole piercing through the upper insulating film. Besides, the storage capacitance electrode, source electrode of the thin film transistor section and a wiring connecting them are integrally formed of the same metal films.