The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Jun. 12, 2002
Chuan-Hsi Liu, Hsin-Chu, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method of determining reliability of semiconductor products. The method comprises providing a semiconductor wafer, which comprises a plurality of MOS transistors formed on its surface, and placing the semiconductor wafer in an environment of a stress temperature during a testing time period. The MOS transistor is simultaneously stressed with a stress voltage. A plurality of testing points are defined in the testing time, and the threshold voltage shift of the MOS transistor is measured at each testing point for establishing a group of experimental data. Finally, a relationship model of threshold voltage shift (&Dgr;V ) vs. time (t) is provided, and the group of experimental data and the relationship model are used to depict a relation curve for predicting the threshold voltage shift of the MOS transistor when exceeding the testing time.