The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Mar. 30, 1998
Applicant:
Inventor:
Naoki Kasai, Tokyo, JP;
Assignee:
NEC Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/348 ;
Abstract
It is a purpose of the invention to provide a semiconductor device comprising a high density integrated circuit having a large number of insulated gate field effect transistors having minute size and improved performance and uniformity. The source contact resistance is set in a value smaller than that of the drain contact resistance by making the diameter of a source contact of an insulated gate field effect transistor larger than that of the drain contact, so as to improve the current driving capability of the transistor and to reduce the variation in the capability.