The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Jul. 30, 2001
Robert Tsu, Plano, TX (US);
Isamu Asano, Iruma, JP;
Shinpei Iijima, Tokyo, JP;
William R. McKee, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention discloses a novel integrated circuit capacitor and a method of forming such a capacitor. The capacitor formation begins with a base electrode adjacent an insulating region . This base electrode can comprise either polysilicon or a metal. A layer of a first material, such as a siliciding metal, is formed over the base electrode as well as the adjacent insulating region. A self-aligned capacitor electrode can then be formed by reacting the first material with the base electrode and removing unreacted portions of the first material from the insulating region . The capacitor is then completed by forming a dielectric layer over the self-aligned capacitor electrode and a second capacitor electrode over the dielectric layer