The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Nov. 29, 2001
Applicant:
Inventors:
Sung-Gil Choi, Yongin, KR;
Tae-Hyuk Ahn, Yongin, KR;
Assignee:
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/1311 ; H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/1311 ; H01L 2/1302 ;
Abstract
A method for forming a contact hole in a semiconductor device includes the steps of forming a polymer layer on an upper portion and a side wall of photo resist mask, while etching an oxide layer under the photoresist mask to form a contact hole that uses an etchant gas comprising CH F gas; and etching the oxide layer while stopping the supply of CH F gas to the etching process.