The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2003

Filed:

Nov. 13, 2001
Applicant:
Inventors:

Shigeki Sakai, Kyoto, JP;

Tadashi Ikejiri, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/600 ; C23C 1/400 ; H01G 3/7317 ;
U.S. Cl.
CPC ...
C23C 1/600 ; C23C 1/400 ; H01G 3/7317 ;
Abstract

When ion beam is irradiated onto a substrate to conduct processing such as ion injection, plasma emitted from a plasma generating device is supplied to a portion close to the substrate to suppress electric charging on a substrate surface caused by ion beam irradiation. A ratio of I /I is kept at a value not lower than 1.8, a ratio of I /I is kept at a value not lower than 0.07 and not higher than 0.7, wherein I is an electric current of the ion beam irradiated onto the substrate , I is an ion current expressing a quantity of ions in the plasma emitted from the plasma generating device and I is an electron current expressing a quantity of electrons in the plasma


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