The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2003
Filed:
Aug. 12, 2002
Applicant:
Inventors:
Yasushi Fujii, Kanagawa, JP;
Atsushi Matsushita, Kanagawa, JP;
Assignee:
Tokyo Ohka Kogyo Co., Ltd., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ;
Abstract
According to the present invention, there is provided a method for processing a coating film, including the steps of forming a silica group coating film having a low dielectric constant on a substrate, etching the silica group coating film through a resist pattern, and processing the silica group coating film with plasma induced from a substantially inactive gas such as helium gas or the like. In this method, the silica group coating film is not damaged when an ashing process is conducted to the resist pattern as a subsequent process, and the low dielectric constant can be maintained.