The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2003

Filed:

Aug. 15, 2001
Applicant:
Inventors:

Mehran Aminzadeh, Saratoga, CA (US);

Michael R. Fahy, Dublin, IE;

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract

A method is described for improving the exposure focus for modern steppers used in the lithography of semiconductor substrates such as wafers. A wafer is sawed from a semiconductor ingot in a particular direction relative to a reference point on the ingot. As a result of the sawing, a series of raised and recessed formations manifest on the surface of the wafer. After various layers have been added to the wafer and the photoresist layer is ready to be removed, the wafer is aligned with the stepper so that a dynamic focus area of the stepper is aligned with the formations and/or the sawing direction. Such alignment improves the critical dimension control and reduces variability in printing small geometry features during lithography, resulting in higher yields.


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