The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2003
Filed:
Aug. 14, 2001
Applicant:
Inventors:
Nobuyuki Negishi, Kokubunji, JP;
Masaru Izawa, Hino, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
Disclosed is a process for fabricating a semiconductor device, which efficiently suppresses a damage layer formed on a base silicon substrate or an interconnection layer and removes a high resistivity layer in the formation of a contact hole, thereby reducing a contact resistance. The contact hole is formed in an etching step of reducing ion energy and an oxygen flow rate as an etching depth progresses, thereby suppressing the damage layer formed on the base. The reduction of the contact resistance is achieved by using a step of removing the high resistivity layer using hydrogen or a hydrogen-containing gas plasma.