The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2003
Filed:
Apr. 11, 2002
Somit Talwar, Palo Alto, CA (US);
Yun Wang, San Jose, CA (US);
Michael O. Thompson, Ithaca, NY (US);
Ultratech Stepper, Inc., San Jose, CA (US);
Abstract
A process for activating a doped region ( ) or amorphized doped region ( ) in a semiconductor substrate ( ). The process includes the steps of doping a region of the semiconductor substrate, wherein the region is crystalline or previously amorphized. The next step is forming a conformal layer ( ) atop the upper surface ( ) of the substrate. The next step is performing at least one of front-side and backside irradiation of the substrate to activate the doped region. The activation may be achieved by heating the doped region to just below the melting point of the doped region, or by melting the doped region but not the crystalline substrate. An alternative process includes the additional step of forming the doped region (amorphized or unamorphized) within or adjacent a deep dopant region ( ) and providing sufficient heat to the deep dopant region through at least one of front-side and backside irradiation so that the doped region is activated through explosive recrystallization.