The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2003
Filed:
Aug. 13, 1996
Applicant:
Inventors:
Kiyoto Watabe, Hyogo, JP;
Tomohide Terashima, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/900 ;
Abstract
A high resistance n-type base layer is formed on a silicon substrate with an insulating layer made of a silicon oxide film therebetween. In the high resistance n-type base layer a p-ch MOS transistor is formed. The p-ch MOS transistor is electrically isolated from another element by trench isolation formed of a trench. A p source layer in the p-ch MOS transistor surrounds a periphery of a p drain layer and has, for example, an elliptical planar configuration. A semiconductor device thus formed has a high drive capacity and is suitable to high integration.