The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2003
Filed:
Jun. 28, 2002
Henry Chung, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method for fabricating vias and trenches in a dual-damascene multilevel interconnection structure of an integration circuit is provided. The method uses chemical vapor deposition and flowfill dielectric technology to deposit a dielectric material at low temperature for fabricating interconnection structure in an integration circuit. It comprises the following steps: (a) forming photo-resist patterns; (b) depositing a dielectric layer at low temperature by chemical vapor deposition and flowfill dielectric technologies; (c) removing the dielectric layer by chemical-mechanical polishing to expose the photo-resist patterns; (d) removing the photo-resist patterns by chemical-mechanical polishing; and (e) stabilizing the dielectric layer by thermal curing.