The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2003
Filed:
Feb. 15, 2001
Todd P. Lukanc, San Jose, CA (US);
Ercan Adem, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
An apparatus and method for detecting an endpoint for an etching process utilize a reaction chamber with an ion source and detector placed within the reaction chamber. The ion source directs a primary beam of ions towards a wafer so that the ion beam impacts the top layer of the wafer. A detector detects primary ions reflected from the wafer and secondary ions scattered from the wafer. A value is determined that corresponds to the amount of reflected and scattered ions. A change in the value indicates that the ion beam is impacting a layer beneath the top layer of the wafer, and signifies the reaching of the etch process endpoint.