The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2003
Filed:
Sep. 19, 2001
Applicant:
Inventors:
Sagy Levy, Sunnyvale, CA (US);
Robin S. Bloom, Petaluma, CA (US);
Avashai Kepten, Bikat Bet Hakerem, IL;
Assignee:
Mattson Technology, Inc., Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 7/131 ;
U.S. Cl.
CPC ...
H01L 7/131 ;
Abstract
A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. In one embodiment, the process is directed to forming a nitride layer on a substrate. In an alternative embodiment, the present invention is directed to forming a metal oxide or silicate on a semiconductor wafer. When forming a metal oxide or silicate, a passivation layer is first deposited onto the substrate.
Levy, Sagy. (2003). Method of forming dielectric films (U.S. Patent No. 6638876). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6638876
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile