The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2003
Filed:
Sep. 06, 2001
Applicant:
Inventors:
Anton C. Greenwald, North Andover, MA (US);
Nader Montazernezam Kalkhoran, Tewksbury, MA (US);
Assignee:
Spire Corporation, Bedford, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/128 ; H01L 2/13205 ;
U.S. Cl.
CPC ...
H01L 2/128 ; H01L 2/13205 ;
Abstract
The present invention provides methods and apparatus for creating insulating layers in Group III-V compound semiconductor structures having aluminum oxide with a substantially stoichiometric compositions. Such insulating layers find applications in a variety of semiconductor devices. For example, in one aspect, the invention provides vertical insulating layers separating two devices, such as photodiodes, formed on a semiconductor substrate from one another. In another aspect, the invention can provide such insulating layers as buried horizontal insulating layers of semiconductor devices.
Published as: