The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2003

Filed:

Nov. 12, 1999
Applicant:
Inventors:

Gurtej Singh Sandhu, Boise, ID (US);

Chris Chang Yu, Aurora, IL (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/348 ;
Abstract

The present invention is a semiconductor wafer, and a method of fabricating the semiconductor wafer, that reduces dishing over large area features in chemical-mechanical polishing processes. The semiconductor wafer has a substrate with an upper surface, a large area feature formed on the substrate, and a separation layer deposited on the substrate. The separation layer has a top surface and a cavity extending from the top surface towards the upper surface of the substrate. The large area feature is positioned in the cavity of the separation layer, and a support pillar is positioned in the cavity. In one embodiment, the pillar has a base positioned between components of the large area feature and a crown positioned proximate to a plane defined by the top surface of the separation layer. In operation, the pillar substantially prevents the polishing pad of a polishing machine from penetrating into the cavity beyond the top surface of the separation layer.


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