The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2003
Filed:
Feb. 28, 2000
Applicant:
Inventors:
Christy Mei-Chu Woo, Cupertino, CA (US);
Young-Chang Joo, Seoul, KR;
Todd Lukanc, San Jose, CA (US);
Assignee:
Advanced Micro Devices Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/106 ;
U.S. Cl.
CPC ...
H01L 3/106 ;
Abstract
A structure and method for determining barrier layer integrity for multi-level copper metallization structures in integrated circuit manufacturing. Novel testing structures prevent any conducting residues of the copper CMP from diffusing into the dielectric layer. Barrier layer integrity is tested by performing CV or IV measurements between the copper lines and the silicon wafer.