The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2003
Filed:
Aug. 29, 2001
Michio Aruga, Narita, JP;
Atsushi Tabata, Narita, JP;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
To perform a film formation process, source RF power is applied to a coil to generate a plasma in a processing chamber. Subsequently, O gas and SiH gas are introduced into the processing chamber. Bias RF power is then applied to a support member to cause permeation of a wafer W by the plasma. At the end of the film formation, the application of the bias RF power to the support member is stopped while the O gas and the SiH gas are kept introduced into the processing chamber. After that, the introduction of the SiH gas is stopped, and the introduction of the O gas is also stopped. Then, the application of the source RF power to the coil is stopped. This can reduce plasma damage to the substrate to be processed.