The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2003
Filed:
Apr. 24, 2002
Applicant:
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18234 ; H01L 2/14763 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18234 ; H01L 2/14763 ; H01L 2/144 ;
Abstract
Disclosed is a system for fabricating a semiconductor device ( ). A layer of cobalt ( ) is deposited onto a silicon region ( ) and annealed to form a cobalt silicide layer ( ). Silicon layers ( ) are selectively deposited onto the cobalt silicide layers ( ). The semiconductor device ( ) is annealed to form disilicide layers ( ) from the cobalt silicide layers ( ) and the silicon contained in silicon regions ( ) and silicon layers ( ).