The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2003

Filed:

Mar. 14, 2000
Applicant:
Inventors:

Glen Fox, Colorado Springs, CO (US);

Fan Chu, Colorado Springs, CO (US);

Brian Eastep, Colorado Springs, CO (US);

Shan Sun, Colorado Springs, CO (US);

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1119 ;
Abstract

A ferroelectric thin film capacitor and a method for producing the same wherein the capacitor dielectric includes multi-layered crystallographic textures. An integrated circuit device, such as a non-volatile memory device, includes at least one capacitor having a top and bottom electrode thereof and a ferroelectric dielectric layer therebetween. The ferroelectric dielectric layer comprises a first ferroelectric layer having a first crystallographic texture forming a main body of the dielectric layer and a second ferroelectric layer having a second differing crystallographic texture forming an interface layer between the main body and one of the top and bottom electrodes.


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