The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2003

Filed:

Jun. 06, 2001
Applicant:
Inventor:

Wei-Wu Liao, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract

This invention discloses a method for avoiding microscratch in interlevel dielectric layer chemical mechanical polishing process. There is step height difference on surface of the interlevel dielectric layer between the memory array and the logic device, so, the interlevel dielectric layer over the memory array is etched to form a sidewall and a corner. As a key step of this invention, a dielectric layer is capped over the interlevel dielectric layer to smooth the corner and avoid microscratch thereon when performing chemical mechanical polishing process.


Find Patent Forward Citations

Liao, Wei-Wu. (2003). Method for avoiding microscratch in interlevel dielectric layer chemical mechanical polishing process (U.S. Patent No. 6627551). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6627551

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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