The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2003
Filed:
Oct. 10, 2002
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method of forming a low resistance metal silicide layer on a narrow width, conductive gate structure, has been developed. After formation of a metal silicide layer on a conductive gate structure via a self-aligned metal silicide (salicide), procedure, unreacted metal is removed via a selective wet etch procedure. Components of the wet etch procedure incorporated in the metal silicide layer, are next removed via a medium temperature—high vacuum anneal procedure. Removal of the wet etch components incorporated in the metal suicide layer allow a final anneal procedure to convert the metal silicide layer to a lower resistance metal silicide layer, without voids or agglomerated regions of metal silicide which may have formed during the final anneal if the incorporated wet etch components had not been removed.