The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2003
Filed:
Jul. 17, 2002
Vincent Wen, Taipei, TW;
Tung-Yaw Kang, Taipei, TW;
Chih-Sheng Chen, Tainan, TW;
Jun-Hsien Chiou, Tainai, TW;
Tsun-Cheng Tang, Chia-i, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
The present invention relates to a method of removing halos resulting from focused ion beam (FIB) repair of clear defects on reticles. The halos are formed during carbon deposition on clear defects. An exposure with 172 nm VUV radiation is used to vaporize the carbon compounds in the halo. MSM measurements of the space width adjacent to the repair site are compared to space widths between similar features in areas that are clear of halos. The radiation and measurement is repeated until the % variation between said space widths is <2%. Cleaning and MSM measurement steps are repeated until space width adjacent to the repair site is within 2% of space width in unaffected areas. This method avoids expensive rework and restores transmission through the substrate adjacent to the repair site to a value equivalent to regions of substrate unaffected by halos.