The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2003
Filed:
Jun. 27, 2001
Applicant:
Inventor:
Uwe Schilling, Dresden, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A process for fabricating a semiconductor component includes providing a trench in a substrate and depositing a liner layer on the resulting structure using a nonconformal deposition process. This results in the liner layer being significantly smaller at the trench walls and base than on the substrate surface. An insulating layer is provided on the resulting structure by a conformal deposition process. The insulating layer is then anisotropically etched to remove the insulating layer from a region of the trench base.