The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2003
Filed:
Aug. 01, 2001
Applicant:
Inventors:
Matthew Stephen Buynoski, Palo Alto, CA (US);
Che-Hoo Ng, San Martin, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A SOI substrate is preamorphized by ion implanting Xe prior to forming source/drain extensions and source/drain regions, thereby virtually eliminating or significantly reducing floating body effects. Other aspects comprise ion implanting a Xe into a bulk silicon or SOI substrate to effect preeamorphization prior to forming source/drain extensions and regions having shallow junctions with reduced vertical and lateral straggle.